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Resistance random access memory performance of MgZnO-based device with varying film thickness by an asymmetric electrode of Au/ITO

Zhang, ZL; Gu, KY; Zhou, XY; Huang, HF; Huang, J; Tang, K; Zhang, JY; Liao, MY; Wang, LJ

Zhang, ZL; Huang, J (corresponding author), Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.

MATERIALIA, 2021; 15 ():

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