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The stacking fault annihilation in a-plane AlN during high-temperature annealing

Sun, XJ; Sui, JE; Ben, JW; Zang, H; Jiang, K; Zhang, SL; Lv, SP; Shi, ZM; Wu, T; Li, DB

Sun, XJ; Li, DB (通讯作者),Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China.;Sun, XJ; Li, DB (通讯作者),Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China.

CRYSTENGCOMM, 2023; 25 (13): 1903

Abstract

Clarifying the defect evolution mechanism is the key to realizing high-quality non-polar AlN based materials and devices. In this work, the basal stac......

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