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Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device

Lv, FZ; Zhong, TT; Qin, YF; Qin, HJ; Wang, WF; Liu, FC; Kong, WJ

Lv, FZ; Liu, FC (corresponding author), Guangxi Normal Univ, Sch Phys Sci & Technol, Guangxi Key Lab Nucl Phys & Technol, Guilin 541004, Peoples R China.

NANOMATERIALS, 2021; 11 (6):

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