Abstract
Osinnykh, IV; Malin, TV; Kozhukhov, AS; Ber, BY; Kazancev, DY; Zhuravlev, KS
Osinnykh, IV (通讯作者),Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia.;Osinnykh, IV (通讯作者),Novosibirsk State Univ, Novosibirsk 630090, Russia.
SEMICONDUCTORS, 2022; 56 (6): 352