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Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Osinnykh, IV; Malin, TV; Kozhukhov, AS; Ber, BY; Kazancev, DY; Zhuravlev, KS

Osinnykh, IV (通讯作者),Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia.;Osinnykh, IV (通讯作者),Novosibirsk State Univ, Novosibirsk 630090, Russia.

SEMICONDUCTORS, 2022; 56 (6): 352

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