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Structure and electronic properties of closed-ring defects in epitaxial graphene

Chen, Y; Li, MC; Wang, QM; Wang, GS; Wei, X; Song, GF; Kong, XM; Xu, Y; Liu, Y

Xu, Y (corresponding author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.; Liu, Y (corresponding author), Beijing Normal Univ, Coll Chem, Beijing 100875, Peoples R China.; Xu, Y (corresponding author), Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China.; Xu, Y (corresponding author), Beijing Key Lab Inorgan Stretchable & Flexible In, Beijing 100083, Peoples R China.

MATERIALS RESEARCH EXPRESS, 2020; 7 (5):

Abstract

A number of past studies have focused on point and line defects in graphene epitaxially grown on SiC substrates. However, few studies have investigate......

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