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Noise behavior of ferro electric tunnel FET

Das, B; Bhowmick, B

Das, B (corresponding author), GIMT Guwahati, Dept ECE, Gauhati 781017, Assam, India.

MICROELECTRONICS JOURNAL, 2020; 96 ():

Abstract

In this paper the noise behavior of ferroelectric TFET is explored for the first time. The effect of ferro-thickness, gate length, buffer type, and bu......

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