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Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Mikolajick, T; Slesazeck, S; Park, MH; Schroeder, U

Mikolajick, T (reprint author), Tech Univ Dresden, Dresden, Germany.; Mikolajick, T (reprint author), Nanoelect Mat Lab GmbH, Dresden, Germany.

MRS BULLETIN, 2018; 43 (5): 340

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