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Silicon Controlled Rectifier Based Partially Depleted SOI ESD Protection Device for High Voltage Application

Jiang, YB; Bi, H; Li, H; Xu, ZH; Shi, C

Jiang, YB (corresponding author), Changzhou Inst Technol, Changzhou, Jiangsu, Peoples R China.

IEICE TRANSACTIONS ON ELECTRONICS, 2020; E103C (4): 191

Abstract

In partially depleted SOI (PD-SOI) technology, the SCR-based protection device is desired due to its relatively high robustness, but be restricted to ......

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