Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions-MedSci.cn

Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions

Zhao, SQ; Wang, JL; Yan, GG; Shen, ZW; Zhao, WS; Wang, L; Liu, XF

Liu, XF (通讯作者)，Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China.;Liu, XF (通讯作者)，Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.;Liu, XF (通讯作者)，Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China.

COATINGS, 2022; 12 (5):

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Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions

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