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The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET

Wang, BS; Cui, JW; Guo, Q; Zheng, QW; Wei, Y; Xi, SX

Cui, JW (corresponding author), Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China.; Cui, JW (corresponding author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

JOURNAL OF SEMICONDUCTORS, 2020; 41 (12):

Abstract

We investigate the hot carrier injection effect (HCI) and how X-ray radiation impacts the HCI of 22-nm nFinFETs as a function of device geometry and i......

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