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An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances

Hu, WR; Luo, HR; Yan, X; Guo, YX

Guo, YX (corresponding author), Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore.; Guo, YX (corresponding author), Natl Univ Singapore Suzhou, Res Inst, Ctr Peak Excellence Smart Med Technol, Suzhou 215123, Peoples R China.

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2021; 69 (7): 3208

Abstract

Neural network-based capacitance models are accurate, but some of them are not charge-conservative. In this work, a novel consistent gate charge model......

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