Development of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement-MedSci.cn - 梅斯（MedSci）

Development of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement

Schmidt, D; Cepler, A; Durfee, C; Pancharatnam, S; Frougier, J; Breton, M; Greene, A; Klare, M; Koret, R; Turovets, I

Schmidt, D (通讯作者)，IBM Res, Albany, NY 12203 USA.

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2022; 35 (3): 412

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