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Hg3In2Te6-based radiation and temperature stable photodetectors

Sklyarchuk, VM; Gnatyuk, VA; Aoki, T

Gnatyuk, VA (reprint author), Natl Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, Prospekt Nauky 41, UA-03028 Kiev, Ukraine.; Gnatyuk, VA (reprint author), Shizuoka Univ, Res Inst Elect, Naka Ku, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan.

INFRARED SENSORS, DEVICES, AND APPLICATIONS VIII, 2018; 10766 ():

Abstract

The Cr/Hg3In2Te6/Cr surface-barrier structures, photosensitive in the range of 0.5-1.8 mu m, have been studied by optical, electrical and photoelectri......

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