Research of single event burnout in a high-performance radiation-hardened SOI lateral power MOSFET-MedSci.cn - 梅斯（MedSci）

Research of single event burnout in a high-performance radiation-hardened SOI lateral power MOSFET

Wang, Y; Wang, LX; Guo, M; Chen, RZ; Wang, SX; Jiang, YC

Wang, LX (通讯作者)，Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China.

MICROELECTRONICS RELIABILITY, 2022; 129 ():

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