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Self-biased magnetoelectric switching at room temperature in three-phase ferroelectric-antiferromagnetic-ferrimagnetic nanocomposites

Wu, R; Zhang, D; Maity, T; Lu, P; Yang, J; Gao, XY; Zhao, SS; Wei, XC; Zeng, H; Kursumovic, A; Tian, G; Li, WW; Yun, C; Wang, YQ; Ren, ZY; Zhou, ZY; Liu, M; Zhang, KHL; Jia, QX; Yang, JB; Wang, HY; MacManus-Driscoll, JL

Wu, R; Maity, T; MacManus-Driscoll, JL (corresponding author), Univ Cambridge, Dept Mat Sci & Met, Cambridge, England.; Wu, R (corresponding author), Beijing Acad Quantum Informat Sci, Beijing, Peoples R China.; Maity, T (corresponding author), Indian Inst Sci Educ & Res Thiruvananthapuram, Sch Phys, Thiruvananthapuram, Kerala, India.

NATURE ELECTRONICS, 2021; 4 (5): 333

Abstract

Magnetoelectric systems could be used to develop magnetoelectric random access memory and microsensor devices. One promising system is the two-phase 3......

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