Baidu
map

Suppression of Timing Variations due to Random Dopant Fluctuation by Back-gate Bias in a Nanometer CMOS Inverter

Zhang, K; Lu, WF; Si, P; Zhao, ZF; Yu, TY

Lu, WF (corresponding author), Hangzhou Dianzi Univ, Coll Elect & Informat, Hangzhou, Peoples R China.

RECENT ADVANCES IN ELECTRICAL & ELECTRONIC ENGINEERING, 2021; 14 (3): 339

Abstract

Background In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors (MOSFETs), optimization of timing characteristic is one o......

Full Text Link


Baidu
map
Baidu
map
Baidu
map