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Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

Tang, XS; Ma, ZG; Han, LL; Deng, Z; Jiang, Y; Wang, WX; Chen, H; Du, CH; Jia, HQ

Ma, ZG; Du, CH; Jia, HQ (corresponding author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing Key Lab New Energy Mat & Devices, Key Lab Renewable Energy,Inst Phys, Beijing 100190, Peoples R China.

VACUUM, 2021; 187 ():

Abstract

The growth technology of GaN-based light-emitting-diodes (LEDs) greatly restricts their preparation of vertical structure. Now we can get GaN-based LE......

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