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Helium incorporation induced direct-gap silicides

Ding, SC; Shi, JM; Xie, JH; Cui, WW; Zhang, P; Yang, K; Hao, J; Zhang, LJ; Li, YW

Shi, JM; Li, YW (corresponding author), Jiangsu Normal Univ, Sch Phys & Elect Engn, Lab Quantum Funct Mat Design & Applicat, Xuzhou, Jiangsu, Peoples R China.; Li, YW (corresponding author), Liaocheng Univ, Shandong Key Lab Opt Commun Sci & Technol, Sch Phys Sci & Informat Technol, Liaocheng, Shandong, Peoples R China.

NPJ COMPUTATIONAL MATERIALS, 2021; 7 (1):

Abstract

The search of direct-gap Si-based semiconductors is of great interest due to the potential application in many technologically relevant fields. This w......

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