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Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance*

Xu, HF; Sun, W; Wang, N

Xu, HF (corresponding author), Anhui Sci & Technol Univ, Inst Elect & Elect Engn, Fengyang 233100, Peoples R China.

CHINESE PHYSICS B, 2021; 30 (7):

Abstract

The various advantages of extended-source (ES), broken gate (BG), and hetero-gate-dielectric (HGD) technology are blended together for the proposed tu......

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