Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors-MedSci.cn

Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors

Wu, XY; Han, WH; Zhao, XS; Guo, YY; Zhang, XD; Yang, FH

Han, WH; Yang, FH (corresponding author), Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China.; Han, WH; Yang, FH (corresponding author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.; Yang, FH (corresponding author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.

Abstract

We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless na......

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Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors

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