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Oxygen vacancy-induced topological nanodomains in ultrathin ferroelectric films

Peng, W; Mun, J; Xie, QD; Chen, JS; Wang, LF; Kim, M; Noh, TW

Peng, W; Noh, TW (corresponding author), Inst for Basic Sci Korea, Ctr Correlated Elect Syst, Seoul, South Korea.; Peng, W; Noh, TW (corresponding author), Seoul Natl Univ, Dept Phys & Astron, Seoul, South Korea.

NPJ QUANTUM MATERIALS, 2021; 6 (1):

Abstract

Oxygen vacancy in oxide ferroelectrics can be strongly coupled to the polar order via local strain and electric fields, thus holding the capability of......

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