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Hybrid heterostructures and devices based on two-dimensional layers and wide bandgap materials

Wu, Z; Jie, W; Yang, Z; Hao, J

Wu, Z (corresponding author), Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China.; Wu, Z (corresponding author), Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China.; Hao, J (corresponding author), Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Hong Kong, Peoples R China.; Hao, J (corresponding author), Hong Kong Polytech Univ, Shenzhen Res Inst, Shenzhen 518057, Peoples R China.

MATERIALS TODAY NANO, 2020; 12 ():

Abstract

With the further development of Moore's law, the process nodes of integrated circuit have reached 7 nm or even smaller size. In addition to the signif......

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