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Metal-insulator transition in few-layered GaTe transistors

Xia, XX; Li, XX; Wang, HW

Li, XX; Wang, HW (corresponding author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China.; Li, XX; Wang, HW (corresponding author), Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China.

JOURNAL OF SEMICONDUCTORS, 2020; 41 (7):

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