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Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Li, YF; Hu, XT; Song, YM; Su, ZL; Wang, WQ; Jia, HQ; Wang, WX; Jiang, Y; Chen, H

Jiang, Y; Chen, H (corresponding author), Chinese Acad Sci, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condensed Matter Phys, Key Lab Renewable Energy,Inst Phys, Beijing 100190, Peoples R China.

VACUUM, 2021; 189 ():

Abstract

A 1-mu m thick N-polar gallium nitride (GaN) thin film has been grown on 2-inch vicinal sapphire substrate (c off 2 degrees toward m plane) by metal o......

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