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Influence of MOS transistor size on data writing in digital driving pixel circuit of OLED-on-silicon

Xu, Y; Qi, PH; Huang, R; Zhao, BH; Liu, MX

Zhao, BH (corresponding author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China.

CHINESE JOURNAL OF LIQUID CRYSTALS AND DISPLAYS, 2021; 36 (5): 680

Abstract

The traditional 6T SRAM (5T and a driving MOS transistor) OLED-on-silicon pixel circuit is taken as an example to analyze the influence of switch size......

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