Using Light for Better Programming of Ferroelectric Devices: Optoelectronic MoS2-Pb(Zr,Ti)O-3 Memories with Improved On-Off Ratios-MedSci.cn

Using Light for Better Programming of Ferroelectric Devices: Optoelectronic MoS2-Pb(Zr,Ti)O-3 Memories with Improved On-Off Ratios

Lipatov, A; Vorobeva, NS; Li, T; Gruverman, A; Sinitskii, A

Lipatov, A; Sinitskii, A (corresponding author), Univ Nebraska, Dept Chem, Lincoln, NE 68588 USA.; Sinitskii, A (corresponding author), Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA.

Abstract

Ferroelectric (FE) devices are conventionally switched by an application of an electric field. However, the recent discoveries of light-matter interac......

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Using Light for Better Programming of Ferroelectric Devices: Optoelectronic MoS2-Pb(Zr,Ti)O-3 Memories with Improved On-Off Ratios

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