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Enhanced Energy Resolution of GaN-on-Sapphire p-i-n Alpha-Particle Detector With Isoelectronic Al-Doped i-GaN Layer

Geng, XL; Xia, XC; Cui, XZ; Huang, HS; Liang, XH; Yan, DW; Tian, KK; Chen, LL; Yan, XH; Long, Z; Niu, MC; Meng, XC; Liang, HW

Xia, XC (corresponding author), Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China.

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021; 68 (8): 2301

Abstract

A GaN alpha-particle detector of p-i-n structure was fabricated on a sapphire substrate in this article. The intrinsic layer of the detector was isoel......

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