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A Shallow Acceptor of Phosphorous Doped in MoSe2 Monolayer

Xia, YP; Zhang, JQ; Yu, ZB; Jin, YJ; Tian, H; Feng, Y; Li, B; Ho, WK; Liu, C; Xu, H; Jin, CH; Xie, MH

Xie, MH (reprint author), Univ Hong Kong, Phys Dept, Pokfulam Rd, Hong Kong, Peoples R China.

ADVANCED ELECTRONIC MATERIALS, 2020; 6 (1):

Abstract

Tuning the conductivity and other electronic properties by doping in ultrathin layers of transition-metal dichalcogenides is of great scientific and p......

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