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Enhanced FMR linewidth and magnetic properties of In3+-doped YIG ferrite materials for microwave devices applications

Li, J; Sun, YH; Gao, F; Su, HK; Han, XI; Liang, Z; Zhang, HW; Li, Q

Li, J (corresponding author), Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China.

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2021; 538 ():

Abstract

Herein, In-doped Y3Fe5-xInxO12 (x = 0.00-0.75 with a step of 0.15) material was fabricated via solid state route. Mixed powders were sintered at 1450 ......

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