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Atom Probe Tomography Characterization of Dopant Distributions in Si FinFET: Challenges and Solutions

Hu, R; Xue, J; Wu, XP; Zhang, YB; Zhu, HL; Sha, G

Sha, G (corresponding author), Nanjing Univ Sci & Technol, Herbert Gleiter Inst Nanosci, Sch Mat Sci & Engn, Nanjing 210094, Jiangsu, Peoples R China.

MICROSCOPY AND MICROANALYSIS, 2020; 26 (1): 36

Abstract

Atom probe tomography (APT) has emerged as an important tool in characterizing three-dimensional semiconductor devices. However, the complex structure......

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