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Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

Roze, F; Gourhant, O; Blanquet, E; Bertin, F; Juhel, M; Abbate, F; Pribat, C; Duru, R

Roze, F (reprint author), STMicroelectronics, 850 Rue Jean Monnet, F-38929 Crolles, France.; Roze, F (reprint author), CEA, LETI, MINATEC Campus,17 Rue Martyrs, F-38054 Grenoble 9, France.; Roze, F (reprint author), Univ Grenoble Alpes, CNRS, Grenoble INP

JOURNAL OF APPLIED PHYSICS, 2017; 121 (24):

Abstract

The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power......

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