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Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs

Li, XQ; Wu, JJ; Ni, K; George, S; Ma, KS; Sampson, J; Gupta, SK; Liu, YP; Yang, HZ; Datta, S; Narayanan, V

Li, XQ (reprint author), Tsinghua Univ, Beijing 100084, Peoples R China.

IEEE DESIGN & TEST, 2019; 36 (3): 39

Abstract

Editor's note: This article explores the design of high-density, low-power, and high-speed embedded nonvolatile memory arrays exploiting the unique de......

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