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Charge transport and quantum confinement in MoS(2)dual-gated transistors

Liao, FY; Wang, HJ; Guo, XJ; Guo, ZX; Tong, L; Riaud, A; Sheng, YC; Chen, L; Sun, QQ; Zhou, P; Zhang, DW; Chai, Y; Jiang, XW; Liu, Y; Bao, WZ

Bao, WZ (corresponding author), Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.; Liu, Y (corresponding author), Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Bandgap Semicond Te, Xian 710071, Peoples R China.

JOURNAL OF SEMICONDUCTORS, 2020; 41 (7):

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