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High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2

Wang, X; Shi, XH; Gu, CR; Guo, Q; Liu, HG; Li, XF; Wu, YQ

Wu, YQ (corresponding author), Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China.; Wu, YQ (corresponding author), Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China.; Wu, YQ (corresponding author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China.; Wu, YQ (corresponding author), Peking Univ, Key Lab Microelect Devices & Circuits, MOE, Beijing 100871, Peoples R China.

APL MATERIALS, 2021; 9 (7):

Abstract

Atomically thin layered tungsten diselenide (WSe2) has attracted tremendous research attention for its potential applications in next-generation elect......

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