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Measurement-based analysis of GaAs HEMT technologies: Multilayer D-H pseudomorphic HEMT versus conventional S-H HEMT

Alim, MA; Ali, MM; Crupi, G

Alim, MA (corresponding author), Univ Chittagong, Dept Elect & Elect Engn, Chittagong 4331, Bangladesh.

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, ; ():

Abstract

The key objective of this study is to check out the performance of two multilayer processed double-heterojunction pHEMTs with different gate width as ......

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