The deterioration of AlN quality caused by residual gallium in the MOCVD reaction chamber-MedSci.cn

The deterioration of AlN quality caused by residual gallium in the MOCVD reaction chamber

Zhang, YH; Yang, J; Zhao, DG; Liang, F; Chen, P; Liu, ZS

Yang, J; Zhao, DG (通讯作者)，Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.;Zhao, DG (通讯作者)，Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China.