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Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate

Smagina, ZV; Zinovyev, VA; Stepikhova, MV; Peretokin, AV; Dyakov, SA; Rodyakina, EE; Novikov, AV; Dvurechenskii, AV

Smagina, ZV (通讯作者),Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia.

SEMICONDUCTORS, 2022; 56 (2): 101

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