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Multichannel Depletion-Type Field-Effect Transistor Based on Ferromagnetic Germanene

Zheng, J; Xiang, Y; Li, CL; Yuan, RY; Chi, F; Guo, Y

Zheng, J (corresponding author), Bohai Univ, Coll Phys Sci & Technol, Jinzhou 121013, Peoples R China.; Zheng, J; Guo, Y (corresponding author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.; Zheng, J; Guo, Y (corresponding author), Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.

PHYSICAL REVIEW APPLIED, 2021; 16 (2):

Abstract

Based on ferromagnetic germanene, we theoretically propose a multichannel depletion-type field-effect transistor (FET) operated by a vertical electric......

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