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Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

Liaw, YG; Liao, WS; Wang, MC; Chen, CW; Li, DS; Gu, HS; Zou, XC

Liao, WS (reprint author), Wuhan Univ, Fac Sch Elect Informat, Wuhan, Hubei, Peoples R China.; Liao, WS (reprint author), Hubei Univ, Fac Phys & Elect Technol, Wuhan, Hubei, Peoples R China.

SEMICONDUCTORS, 2017; 51 (12): 1650

Abstract

The length of Source/Drain (S/D) extension (L (SDE)) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is expo......

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