期刊： SEMICONDUCTORS, 2021; 55 (3)
High-quality gallium nitride etching is highly desirable in electronic device fabrications. For the GaN base devices, the electronic properties largel......
期刊： SEMICONDUCTORS, 2021; 55 (1)
The effects of total ionizing dose (TID) radiation from Co-60 gamma-rays on an 8-transistor global shutter exposure complementary metal-oxide semicond......
期刊： SEMICONDUCTORS, 2021; 55 (2)
With the continuous development of optoelectronic devices, parasitic capacitance of electrostatic protection device in the optoelectronic control circ......
期刊： SEMICONDUCTORS, 2020; 54 (1)
High performance growth of terahertz quantum cascade lasers (THz QCLs) based on hybrid bound-to-continuum transition and resonant phonon extraction is......
期刊： SEMICONDUCTORS, 2020; 54 (5)
Minimizing the impact of radiation-induced degradation in dilute nitride based optoelectronic devices is crucial in its applications. The effects of 1......
期刊： SEMICONDUCTORS, 2020; 54 (8)
Vanadium dioxide (VO2) undergoes a reversible metal-insulator transition at low temperature, which has wide range of applications in smart windows and......
期刊： SEMICONDUCTORS, 2020; 54 (9)
ZnO thin films were formed onc-plane sapphire and p-GaN substrates by pulsed laser deposition (PLD) and radio frequency (RF) magnetron sputtering tech......
期刊： SEMICONDUCTORS, 2020; 54 (10)
In this paper, based on density functional theory (DFT), the structural, elastic and thermal properties of different structures of the quaternary comp......
期刊： SEMICONDUCTORS, 2019; 53 (5)
The results of investigations of the thermoelectric properties of In0.2Ce0.1Co4Sb12.3 compound prepared by the rapid-quenching technique are presented......
期刊： SEMICONDUCTORS, 2019; 53 (13)
The performance of InGaN/GaN multiple quantum well (MQW) solar cells with five different Si-doping concentrations, namely 0, 4 x 10(17) cm(-3), 1 x 10......
期刊： SEMICONDUCTORS, 2018; 52 (4)
We have investigated the Structural, mechanical and thermodynamic properties of Cu2CoXS4 (X = Si, Ge, Sn) by using the density functional theory metho......
期刊： SEMICONDUCTORS, 2018; 52 (14)
The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC su......
期刊： SEMICONDUCTORS, 2018; 52 (7)
A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device str......
期刊： SEMICONDUCTORS, 2017; 51 (3)
The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electroma......
期刊： SEMICONDUCTORS, 2017; 51 (12)
The length of Source/Drain (S/D) extension (L (SDE)) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is expo......
