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High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage

Zhang, XM; Yan, CL; Yu, GH; Zeng, CH; Sun, TY; Xing, Z; Wang, YQ; Yang, JH; Zhang, BS

Yan, CL (corresponding author), Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China.

SEMICONDUCTORS, 2021; 55 (3): 387

Abstract

High-quality gallium nitride etching is highly desirable in electronic device fabrications. For the GaN base devices, the electronic properties largel......

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