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Investigation of 4H-SiC Schottky barrier diodes irradiated with 6 MeV Au ions at low temperature

Wang, SM; Hu, RB; Chen, G; Luo, CT; Gong, M; Li, Y; Huang, MM; Ma, Y; Yang, ZM

Yang, ZM (corresponding author), Sichuan Univ, Coll Phys, Key Lab Microelect, Chengdu 610065, Peoples R China.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2021; 494-495 (): 53

Abstract

The change in the electrical properties of 4H-SiC Schottky barrier diodes (SBDs) irradiated by 6 MeV Au ions at low temperature (LT) is investigated. ......

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