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An Adaptive Electrothermal Model for Estimating the Junction Temperature of Power Device

Hu, Z; Zhou, Y; Zhang, TF; Jiang, YJ

Hu, Z (corresponding author), Nanjing Univ Posts & Telecommun, Coll Automat, Nanjing 210003, Peoples R China.

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (7): 3475

Abstract

The insulated-gate bipolar transistor (IGBT) module that is sensitive to high temperature has been identified as one of the most fragile parts in elec......

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