期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (8)
Steep-slope switching is effective to reduce the required energy for switching, however, at least 60 mV of gate voltage is required to modulate the cu......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (6)
We numerically calculate using the 2-D electromagnetic solver SUPERFISH the dispersion relation for electromagnetic modes supported by finite-length, ......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (7)
The electron beam of a K-band space traveling-wave tube (TWT) has been investigated in a beam measurement system in this article. The primary beam emi......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (7)
A new panel-level silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module was developed by using the fan-out and......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (7)
This article presents a new planar gradient-meander line (PGML) inductor, analyzes its characteristics, and provides a simplified expression for its h......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (8)
This work presents the fabrication and characterization of a high-performance vertical Nickel oxide (NiO)/Beta gallium oxide (beta-Ga2O3) heterojuncti......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (9)
In-memory computing (IMC) is attracting interest for accelerating data-intensive computing tasks, such as artificial intelligence (AI), machine learni......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (5)
A novel RF small-signalmodel in the formof a physics-based equivalent circuit for advanced bulk FinFETs is proposed. Based on the uniquemultifin struc......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (6)
Greater than 190 degrees C continuous wave (CW) lasing is achieved from 905 nm high-efficiency vertical cavity surface-emitting lasers (VCSELs). The m......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (6)
Metaconductors with near-zero permeability is an incentive for the development of high-frequency passive components due to effective suppression of sk......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (8)
The thermistor was fabricated by filling the nematic liquid crystal (NLC) material IM95100-000 into a liquid crystal device with an interdigital elect......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (5)
With the increase in frequency, IGBT can generate serious electromagnetic interference (EMI) when it is turned on and off quickly. The variations in v......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (5)
An L-band all cavity axial extraction (ACAE) relativistic magnetron (RM) with a split cathode is proposed. The proposed RM is driven by virtual cathod......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (6)
In this work, we report a method to enlarge the trapezoidal cantilever-based harvester power by using the high-performance Sc0.2Al0.8N/aluminum nitrid......
期刊： IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (7)
The insulated-gate bipolar transistor (IGBT) module that is sensitive to high temperature has been identified as one of the most fragile parts in elec......
