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A New Method to Measure the Parasitic Parameter Model of IGBT on Bias Voltage

Wang, JH; Chen, W

Chen, W (corresponding author), Fuzhou Univ, Coll Elect Engn & Automat, Fuzhou 350100, Peoples R China.

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (5): 2387

Abstract

With the increase in frequency, IGBT can generate serious electromagnetic interference (EMI) when it is turned on and off quickly. The variations in v......

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