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Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions

Liu, ZW; Cai, PY; Yu, SH; Han, LX; Wang, RS; Wu, YQ; Ren, PP; Ji, ZG; Huang, R

Ji, ZG (corresponding author), Shanghai Jiao Tong Univ, Natl Key Lab Sci & Technol Micronano Fabricat, Shanghai 200240, Peoples R China.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 (): 735

Abstract

Increasing demands for mass storage and new paradigm computing ask for non-volatile memories that can meet reliability requirements. Hf0.5Zr0.5O2-base......

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