期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
In this article, novel double-layer films were designed and examined for dye-sensitized solar cells (DSSCs). The commercial titanium dioxide (TiO2) na......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
With the simulation calibration for negative capacitor considering Landau model and multidomain (MD) effect, MD MFIS negative capacitance field-effect......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
AC positive bias temperature instability (PBTI) of germanium nMOSFETs with GeO2/Ge and Si-cap/Ge gate stack was investigated in this brief. AC-DC-AC a......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
A self-aligned fabrication process for top-gate amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs) is developed, in which the source/drain ......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
Increasing demands for mass storage and new paradigm computing ask for non-volatile memories that can meet reliability requirements. Hf0.5Zr0.5O2-base......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
A discrete GaN power transistor's substrate is typically connected to its source electrode. However, on the GaN-on-Si power IC platform, the high-side......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for t......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
We put forward a non-contact method for determining the transient two-dimensional (2D) temperature distribution of light emitting diodes (LEDs) A high......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
The failure behavior and the corresponding physical mechanism of the AlGaN/GaN high electron mobility transistors (HEMTs) under transmission line puls......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
The effects of Ti incorporation in La2O3 gate dielectric on the electrical characteristics of amorphous InGaZnO thin-film transistor are studied. Comp......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
A novel high performance SiC asymmetric cell trench MOSFET with split gate (SG) and integrated junction barrier schottky (JBS) diode (SGS-ATMOS) is pr......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
The long-term reliability of InZnO (IZO) thin film transistors (TFTs) under a hydrogen-containing environment is researched. Hydrogen incorporation in......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
Resistive switching random access memory (RRAM) shows its potential to be a promising candidate as the basic in-memory computing unit for deep neural ......
期刊： IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 ()
In this paper, the influences of channel transport on the output characteristic in sub-100nm heterojunction tunnel FET have been investigated through ......
