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Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

Yang, H; Li, JY; Zhou, XL; Lu, L; Zhang, SD

Zhang, SD (corresponding author), Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China.; Zhang, SD (corresponding author), Peking Univ, Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 (): 653

Abstract

A self-aligned fabrication process for top-gate amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs) is developed, in which the source/drain ......

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