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Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency Noise

Chen, YY; Liu, Y; Wang, L; Li, B; Xiong, XM; Chen, RS

Chen, RS (corresponding author), South China Univ Technol, Sch Microelect, Guangzhou 510640, Peoples R China.; Chen, RS (corresponding author), Pazhou Lab, Guangzhou 510330, Peoples R China.; Liu, Y (corresponding author), Guangdong Univ Technol, Sch Microelect, Guangzhou 510006, Peoples R China.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021; 9 (): 778

Abstract

The long-term reliability of InZnO (IZO) thin film transistors (TFTs) under a hydrogen-containing environment is researched. Hydrogen incorporation in......

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