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Negative-Capacitance FET With a Cold Source

Guo, SJ; Prentki, RJ; Jin, KX; Chen, CL; Guo, H

Guo, SJ (corresponding author), Northwestern Polytech Univ, Sch Phys Sci & Technol, Key Lab Space Appl Phys & Chem, Minist Educ, Xian 710072, Peoples R China.; Guo, SJ (corresponding author), McGill Univ, Ctr Phys Mat, Dept Phys, Montreal, PQ H3A 2T8, Canada.

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021; 68 (2): 911

Abstract

The subthreshold swing (SS) of a field-effect transistor (FET) is given by the body factor multiplied by the transport factor and has a limit of 60 mV......

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